| PART |
Description |
Maker |
| MTY100N10E-D |
Power MOSFET 100 Amps, 100 Volts
|
ON Semiconductor
|
| NTP52N10 NTP52N10_D NTP52N10D NTP52N10/D |
Power MOSFET 52 Amps, 100 Volts
Power MOSFET 52 Amps 100 Volts
|
ONSEMI[ON Semiconductor]
|
| UT12N10 UT12N10G-TN3-R UT12N10L-TN3-R |
12 Amps, 100 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 6N10L-TN3-R 6N10G-TN3-R |
6 Amps, 100 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MTB40N10E-D |
Power MOSFET 40 Amps, 100 Volts N-Channel D2PAK
|
ON Semiconductor
|
| NTP13N10-D |
Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement-Mode TO-220
|
ON Semiconductor
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| PPF5210M |
P Channel MOSFET; Package: TO-254; ID (A): 19; RDS(on) (Ohms): 0.07; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 30 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| NTB90N02 NTB90N02T4 NTP90N02 |
Power MOSFET 90 Amps / 24 Volts
TV 18C 14#22D 4#8(TWINAX) PIN 90 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 90 Amps, 24 Volts
Power MOSFET 90 Amps 24 Volts
|
ONSEMI[ON Semiconductor]
|
| IRF520N |
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET（减振钢板基本\u003d 100伏，的Rds（on）\u003d 0.20欧姆，身份证\u003d 9.7A
Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A)
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)
|
International Rectifier, Corp.
|
| NTB6410ANT4G NTP6410AN NTP6410ANG NTB6410ANG |
N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
76 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
ON Semiconductor
|
|
